Flash memory cells work by using a large voltage to effectively ram electric charge across an insulated gap. Once there, it ...
Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology TOKYO— Toshiba Corporation (TOKYO: 6502) today announced breakthroughs in ...