This new module is the first to incorporate a power semiconductor comprised of just an SiC MOSFET, increasing the rated current to 180A for broader applicability while contributing to lower power ...
Toshiba Electronics Europe has launched a new 150V N-channel power MOSFET based upon their latest generation U-MOS X-H Trench process. The TPH9R00CQ5 has been specifically designed for use in high ...
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